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Fudan University successfully developed conformal hexagonal boron nitride modification technology

Issuing time:2019-08-18 15:33

After three years of hard work, the Wei Dacheng team of the State Key Laboratory of Polymer Molecular Engineering of Fudan University has successfully developed a conformal hexagonal boron nitride modification technology. On March 13, relevant research results were published online in Nature-Communication. Experts believe that this work will hopefully provide a new technology for dielectric substrate modification to solve the problem of chip heat dissipation.

With the continuous development of semiconductor chips, the computing speed is getting faster and faster, and the problem of chip heating becomes a bottleneck restricting the development of chip technology. Thermal management is very important for developing high-performance electronic chips.

To this end, the researchers developed a conformal hexagonal boron nitride modification technique that requires no catalyst directly on the silicon dioxide/silicon wafer (SiO2/Si), quartz, sapphire, monocrystalline silicon at a minimum temperature of 300 degrees Celsius. A high-quality hexagonal boron nitride film is grown even on the surface of a silicon oxide substrate having a three-dimensional structure. The conformal hexagonal boron nitride has an atom-scale cleaned van der Waals dielectric surface, which is in close contact with the substrate, and can be directly applied to a field effect transistor of a semiconductor material such as tungsten selenide without transfer. This is also the first application of hexagonal boron nitride in the field of heat dissipation between semiconductor and dielectric substrate interfaces.

According to reports, the heat dissipation of the chip is largely limited by various interfaces, and the interface between the semiconductor and the dielectric substrate near the conductive channel is particularly important. Hexagonal boron nitride is an ideal dielectric substrate modifying material that improves the interface between semiconductor and dielectric substrates. However, the potential application of hexagonal boron nitride in the field of interface heat dissipation is often overlooked.

"In this technology, the conformal hexagonal boron nitride grows directly on the surface of the material, not only completely conforming, leaving no gaps, and no transfer is required," said Wei Dacheng, a researcher. This technology will provide new ideas for solving the problem of chip heat dissipation from a new perspective.

Wei Dacheng said that after conformal hexagonal boron nitride modification, the mobility of tungsten disilicide field-effect transistor devices increased from 2 to 21 square centimeters per volt to 56 to 121 square centimeters per volt; interface thermal resistance (WSe2/h) -BN/SiO2) is lower than 4.2 x 10-8 square meters Kelvin per watt, which is 4.55 x 10-8 square meters Kelvin per watt lower than the unmodified interface (WSe2/SiO2). The maximum power density of the device operation is increased by 2 to 4 times, reaching 4.23 × 103 watts per square centimeter, which is higher than the power density of the existing computer CPU (about watts per square centimeter).

Experts say that this technology is universal and can be applied not only to transistor devices based on tungsten selenide, but also to other materials and more device applications. (Huang Xin)

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